SK Hynix HMCG66AEBSA095N 8GB Memory Module

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SK Hynix HMCG66AEBSA095N 8GB Memory Module - 1R x 16 - DDR5 - 4800 MHz - 1.1 Volts - CL40 - 262-Pin - SO-DIMM

The performance enhancements and TCO savings over DDR4 realize greater value for customers, while the 20% smaller power footprint delivers value for the environment and society as well. The 16Gb DDR5 can process data at a rate of 4,800Mbps at present. DDR5 has double the memory access availability of DDR4 with eight bank groups and 32 banks in its architecture, both twice that of DDR4, supported by the Same Bank Refresh function that allows other banks to be accessed while a specific bank is refreshed in all bank groups. DDR5 is also more efficient, delivering 2x speeds with 1.1V in operating voltage and overall consuming 20% less power than

Model Number	HMCG66AEBSA095N
Product Name	SK Hynix HMCG66AEBSA095N 8GB Memory Module
Product Type	Memory Module
Memory Capacity	8 GB
Memory Technology	DDR5
Memory Voltage	1.1 Volts
Number of Modules	1R x 16
Memory Speed	4800 MHz
Clock Speed	2400 MHz
Error Checking	Non-ECC
Signal Processing	Unbuffered
CAS Latency	CL40
Number of Pins	262 Pin
Form Factor	SO-DIMM
Rank	1R
DRAM Density	16 Gbit

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